Semiconductor Device with Reduced Contact Resistance and Methods of Forming the Same

ABSTRACT

Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a substrate; a gate structure disposed over the substrate and over a channel region of the semiconductor device, wherein the gate structure includes a gate stack and spacers disposed along sidewalls of the gate stack, the gate stack including a gate dielectric layer and a gate electrode; a first metal layer disposed over the gate stack, wherein the first metal layer laterally contacts the spacers over the gate dielectric layer and the gate electrode; and a gate via disposed over the first metal layer.

PRIORITY DATA

The present application is a divisional application of U.S. patentapplication Ser. No. 16/571,358 filed Sep. 16, 2019, which is hereinincorporated by reference in its entirety.

BACKGROUND

The integrated circuit (IC) industry has experienced exponential growth.Technological advances in IC materials and design have producedgenerations of ICs, where each generation has smaller and more complexcircuits than the previous generation. In the course of IC evolution,functional density (i.e., the number of interconnected devices per chiparea) has generally increased while geometry size (i.e., the smallestcomponent (or line) that can be created using a fabrication process) hasdecreased. This scaling down process generally provides benefits byincreasing production efficiency and lowering associated costs.

However, such scaling down has also increased the complexity ofprocessing and manufacturing ICs and, for these advances to be realized,similar developments in IC processing and manufacturing are needed. Forexample, it has been observed that the space between gate via andsource/drain (S/D) contact is getting smaller and smaller due to thescaling down of the semiconductor device. If the space between the gatevia and the S/D contacts is too small, for example, due to an overlaymask shifting during fabrication, current leakage may be induced betweenthe gate and the S/D conductive materials. In addition, the resistancebetween the metal gate and gate via and the resistance between the S/Dcontacts and S/D via are high because of the small contact surfaces anddifferent conductive materials between the metal gate and gate via andbetween the S/D contacts and the S/D via. Accordingly, improvements areneeded.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detaileddescription when read with the accompanying figures. It is emphasizedthat, in accordance with the standard practice in the industry, variousfeatures are not drawn to scale and are used for illustration purposesonly. In fact, the dimensions of the various features may be arbitrarilyincreased or reduced for clarity of discussion.

FIG. 1 illustrates a flowchart of an example method for making asemiconductor device in accordance with some embodiments of the presentdisclosure;

FIG. 2 illustrates a three-dimensional perspective view of an examplesemiconductor device in accordance with some embodiments of the presentdisclosure;

FIGS. 3, 4, 6-15, 17, and 18 illustrate cross-sectional views alongplane A-A shown in FIG. 2 of the example semiconductor device atintermediate stages of the method of FIG. 1 in accordance with someembodiments of the present disclosure;

FIG. 5A illustrates a three-dimension perspective view of the contactprofile between the gate electrode and the first metal layer of theexample semiconductor device in accordance with some embodiments of thepresent disclosure;

FIGS. 5B-5F illustrate cross-sectional views along plane B-B shown inFIG. 5A of the contact profile between the gate electrode and the firstmetal layer of the example semiconductor device in accordance with someembodiments of the present disclosure;

FIG. 16 illustrates a three-dimensional perspective view of the contactprofiles between the S/D contacts and the second metal layer of theexample semiconductor device in accordance with some embodiments of thepresent disclosure;

FIG. 19 illustrates three-dimensional perspective views of the contactprofile of the gate electrode, the first metal layer, and the gate viaof the example semiconductor device in accordance with some embodimentsof the present disclosure;

FIG. 20 illustrates three-dimensional perspective views of the contactprofile of the S/D contacts, the second metal layer, and the S/D via ofthe example semiconductor device in accordance with some embodiments ofthe present disclosure; and

FIGS. 21-23 illustrate cross-sectional views along plane A-A shown inFIG. 2 of the example semiconductor device in accordance with variousembodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact.

In addition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.Moreover, the formation of a feature on, connected to, and/or coupled toanother feature in the present disclosure that follows may includeembodiments in which the features are formed in direct contact, and mayalso include embodiments in which additional features may be formedinterposing the features, such that the features may not be in directcontact. In addition, spatially relative terms, for example, “lower,”“upper,” “horizontal,” “vertical,” “above,” “over,” “below,” “beneath,”“up,” “down,” “top,” “bottom,” etc. as well as derivatives thereof(e.g., “horizontally,” “downwardly,” “upwardly,” etc.) are used for easeof the present disclosure of one features relationship to anotherfeature. The spatially relative terms are intended to cover differentorientations of the device including the features. Still further, when anumber or a range of numbers is described with “about,” “approximate,”and the like, the term is intended to encompass numbers that are withina reasonable range including the number described, such as within +/−10%of the number described or other values as understood by person skilledin the art. For example, the term “about 5 nm” encompasses the dimensionrange from 4.5 nm to 5.5 nm.

The present disclosure is generally related to semiconductor devices andthe fabrication thereof. Due to the scaling down of the semiconductordevice, the geometry size between different components of thesemiconductor device is getting smaller and smaller which may cause someissues and damage the performance of the semiconductor device. Forexample, in a conventional fabrication, due to the hard mask overlayshifting and/or fabrication deviation, the space between the gate viaand the S/D contacts may be very small. Current leakage may be occurreddue to the short path between the gate via and the S/D contact. This mayinduce low yield and damage the performance of the semiconductor device.In addition, there is always a need to reduce the resistance between themetal gate and the gate via, and/or between the S/D contacts and the S/Dvia.

The present disclosure provides a semiconductor device with hard maskisolation between the gate via and the S/D contact. The hard maskisolation may comprise one or more layers which can provide a safe spacebetween the gate via and the S/D contact, thereby to mitigate theoccurrence of the current leakage therebetween. In addition, to reducethe resistance between the gate and gate via and/or between the S/Dcontact and S/D via, the present disclosure also provides asemiconductor device with extra metal layers disposed between the gateand gate via and/or between the S/D contact and S/D via. The extra metallayers include the same material as the via and enlarge the contactsurface between the contact (for example, the metal gate or the S/Dcontact) and the via (for example, the gate via or the S/D via), therebyto reduce the contact resistance therebetween. Accordingly, theperformance of the semiconductor device may be improved. Of course,these advantages are merely exemplary, and no particular advantage isrequired for any particular embodiment.

FIG. 1 illustrates a flow chart of a method 100 for forming asemiconductor device 200 (hereafter called “device 200” in short) inaccordance with some embodiments of the present disclosure. Method 100is merely an example and is not intended to limit the present disclosurebeyond what is explicitly recited in the claims. Additional operationscan be performed before, during, and after method 100, and someoperations described can be replaced, eliminated, or moved around foradditional embodiments of the method. Method 100 is described below inconjunction with other figures, which illustrate variousthree-dimensional and cross-sectional views of device 200 duringintermediate steps of method 100. In particular, FIG. 2 illustrates athree-dimensional view of device 200 initially provided. FIGS. 3, 4,6-15, 17 and 18 illustrate cross-sectional views of device 200 takenalong plane A-A shown in FIGS. 2 (that is, along an x-direction).

Device 200 may be an intermediate device fabricated during processing ofan integrated circuit (IC), or a portion thereof, that may comprisestatic random-access memory (SRAM) and/or other logic circuits, passivecomponents such as resistors, capacitors, and inductors, and activecomponents such as p-type FETs (PFETs), n-type FETs (NFETs), fin-likeFETs (FinFETs), metal-oxide semiconductor field effect transistors(MOSFET), complementary metal-oxide semiconductor (CMOS) transistors,bipolar transistors, high voltage transistors, high frequencytransistors, and/or other memory cells. Device 200 can be a portion of acore region (often referred to as a logic region), a memory region (suchas a static random access memory (SRAM) region), an analog region, aperipheral region (often referred to as an input/output (I/O) region), adummy region, other suitable region, or combinations thereof, of anintegrated circuit (IC). In some embodiments, device 200 may be aportion of an IC chip, a system on chip (SoC), or portion thereof. Thepresent disclosure is not limited to any particular number of devices ordevice regions, or to any particular device configurations. For example,though device 200 as illustrated is a three-dimensional FET device, thepresent disclosure may also provide embodiments for fabricating planarFET devices.

Referring to FIGS. 1 and 2, at operation 102, method 100 provides asemiconductor device 200. Semiconductor device 200 includes one or morefins 204 protruding from a substrate 202 and separated by an isolationstructure 208. One or more gate structures 210 are disposed oversubstrate 202 and fins 204. Gate structures 210 defines a channel region(covered by gate structures 210), a source region and a drain region(both referred to as source/drain (S/D) regions) of fins 204. Gatestructures 210 may include gate stacks 211 and gate spacers 214 disposedalong sidewalls of gate stacks 211. Gate structures 210 may includeother components such as one or more gate dielectric layers disposedover substrate 202 and below gate stacks 211, a barrier layers, a gluelayer, a capping layer, other suitable layers, or combinations thereof.Various gate hard mask layers may be disposed over gate stacks 211 andmay be considered a part of gate structures 210. Device 200 may alsoinclude S/D features 220 epitaxially grown over the S/D regions of fins204. Device 200 may also include interlayer dielectric (ILD) layer 230disposed over substrate 202 and fins 204 and between gate structures210. It is understood components included in device 200 are not limitedto the numbers and configurations as shown in FIG. 2. More or lesscomponents, for example, more or less gate structures and/or S/Dfeatures, may be included in device 200.

In the depicted embodiment of FIG. 2, device 200 comprises a substrate(wafer) 202. In the depicted embodiment, substrate 202 is a bulksubstrate that includes silicon. Alternatively or additionally, the bulksubstrate includes another elementary semiconductor, a compoundsemiconductor, an alloy semiconductor, or combinations thereof.Alternatively, substrate 202 is a semiconductor-on-insulator substrate,such as a silicon-on-insulator (SOI) substrate, a silicongermanium-on-insulator (SGOI) substrate, or a germanium-on-insulator(GOI) substrate. Semiconductor-on-insulator substrates can be fabricatedusing separation by implantation of oxygen (SIMOX), wafer bonding,and/or other suitable methods. Substrate 202 may include various dopedregions. In some embodiments, substrate 202 includes n-type dopedregions (for example, n-type wells) doped with n-type dopants, such asphosphorus (for example, ³¹P), arsenic, other n-type dopant, orcombinations thereof. In some embodiments, substrate 202 includes p-typedoped region (for example, p-type wells) doped with p-type dopants, suchas boron (for example, ¹¹B, BF₂), indium, other p-type dopant, orcombinations thereof. An ion implantation process, a diffusion process,and/or other suitable doping process can be performed to form thevarious doped regions.

Semiconductor fins 204 are formed over substrate 202. Each fin 204 maybe suitable for providing an n-type FET or a p-type FET. Fins 204 areoriented substantially parallel to one another. Each of fins 204 has atleast one channel region and at least one source region and one drainregion defined along their length in the x-direction, where the at leastone channel region is covered by gate structures and is disposed betweenthe S/D regions. In some embodiments, fins 204 are portions of substrate202 (such as a portion of a material layer of substrate 202). Forexample, in the depicted embodiment, where substrate 202 includessilicon, fins 204 include silicon. Alternatively, in some embodiments,fins 204 are defined in a material layer, such as one or moresemiconductor material layers, overlying substrate 202. For example,fins 204 can include a semiconductor layer stack having varioussemiconductor layers (such as a heterostructure) disposed over substrate202. The semiconductor layers can include any suitable semiconductormaterials, such as silicon, germanium, silicon germanium, other suitablesemiconductor materials, or combinations thereof. The semiconductorlayers can include same or different materials, etching rates,constituent atomic percentages, constituent weight percentages,thicknesses, and/or configurations depending on the design requirementof device 200. Fins 204 are formed by any suitable process includingvarious deposition, photolithography, and/or etching processes.

Isolation structure 208 is formed over substrate 202 and separates thelower portions of fins 204. Isolation structure 208 electricallyisolates active device regions and/or passive device regions of device200. Isolation structure 208 can be configured as different structures,such as a shallow trench isolation (STI) structure, a deep trenchisolation (DTI) structure, a local oxidation of silicon (LOCOS)structure, or combinations thereof. Isolation structure 208 includes anisolation material, such as silicon oxide, silicon nitride, siliconoxynitride, other suitable isolation material, or combinations thereof.Isolation structure 208 is deposited by chemical vapor deposition (CVD),physical vapor deposition (PVD), atomic layer deposition (ALD), highdensity plasma CVD (HDPCVD), metal organic CVD (MOCVD), remote plasmaCVD (RPCVD), plasma enhanced CVD (PECVD), low pressure CVD (LPCVD),atomic layer CVD (ALCVD), atmospheric pressure CVD (APCVD), othersuitable deposition process, or combinations thereof. In someembodiments, isolation structure 208 is formed before fins 204 areformed (an isolation-first scheme). In some other embodiments, fins 204are formed before isolation structure 208 is formed (a fin-firstscheme). A planarization process, such as a chemical mechanicalpolishing (CMP) process, can be performed on isolation structure 208.

In the depicted embodiment of FIG. 2, various gate structures 210 areformed over fins 204. Gate structures 210 extend along a y-direction andare disposed substantially parallel to one another. Gate structures 210engage the respective channel regions of fins 204, such that current canflow between the respective S/D regions of fins 204 during operation.Each gate structure 210 may comprise a gate stack 211 and spacers 214.Gate stack 211 may comprise a gate dielectric layer 212, a gateelectrode 213, a hard mask layer (not shown), and/or other suitablelayers. Gate dielectric layer 212 may include a high-k dielectricmaterial, which is a material having a dielectric constant that isgreater than a dielectric constant of silicon dioxide (SiO2), which isapproximately 3.9. Gate electrode 213 may include metal-containingmaterials. In some embodiments, gate electrodes 213 may include a workfunction metal component and a fill metal component. The work functionalmetal component is configured to tune a work function of itscorresponding FET to achieve a desired threshold voltage Vt. In variousembodiments, the work function metal component may contain TiAl, TiAlN,TaCN, TiN, WN, W, other suitable material, or combinations thereof. Thefill metal component is configured to serve as the main conductiveportion of the functional gate structure. In various embodiments, thefill metal component may comprise Aluminum (Al), Tungsten (W), Copper(Cu), or combinations thereof. Each of the gate structures 210 has agate length along the x-direction between the S/D regions.

Spacers 214 are disposed along the sidewalls of gate stacks 211. Spacers214 may comprise one or more dielectric layers and pattern layers. Forexample, as depicted in FIG. 2, spacers 214 comprises a dielectric layer214-1 disposed along sidewalls of gate stacks 211 and a pattern layer214-2 disposed along sidewalls of dielectric layer 214-1. In someembodiments, dielectric layer 214-1 may include any suitable dielectricmaterial, such as silicon, oxygen, carbon, nitrogen, other suitablematerial, or combinations thereof (for example, silicon oxide (SiO),silicon nitride (SiN), silicon oxynitride (SiON), or silicon carbide(SiC), low-k (k<3.9) dielectric). In some embodiments, pattern layer214-2 may include any suitable material that has a different etch ratethan the dielectric layer, such as silicon nitride (SiN), silicon carbonnitride (SiCN), silicon oxycarbonitride (SiOCN), other suitabledielectric materials, or combinations thereof. For example, patternlayer 214-2 of spacer 214 includes nitride-rich SiN, wherein a molarratio of the nitride is about 20% to about 60% (for example, more than50%). Formation of spacers 214 may include various steps. For example,first, a dielectric layer 214-1 is formed conformally over substrate202, and a pattern layer 214-2 is formed conformally over dielectriclayer 214-1. Dielectric layer 214-1 may be formed by any suitablemethod, such as ALD, CVD, PVD, other suitable methods, or combinationsthereof. Pattern layer 214-2 may be deposited by any suitable method,such as ALD, to any suitable thickness. Subsequently, top portions ofdielectric layer 214-1 and pattern layer 214-2 are removed by ananisotropic etching process or any other suitable process. The etchingprocess may be a dry etching process, a wet etching process, a reactiveion etching (RIE) process, or combinations thereof. The remainingportions of dielectric layer 214-1 and pattern layer 214-2 form gatespacers 214.

In some other embodiments, gate structures 210 are formed by a gatereplacement process after other components (for example, epitaxial S/Dfeatures 220 and the first ILD layer 230) of device 200 are fabricated.In a gate replacement process, dummy gate structures are formed over thechannel regions of fin 204. Each dummy gate structure may include adummy gate electrode comprising polysilicon (or poly) and various otherlayers, for example, a hard mask layer disposed over dummy gateelectrode, and an interfacial layer disposed over fins 204 and substrate202 and below the dummy gate electrode. Spacers 214 are then formedalong sidewalls of the dummy gate structure by any suitable method thataforementioned. After the formation of epitaxial S/D features 220 aswell as the first ILD layer 230, dummy gate structures are removed alongspacers 214 using one or more etching processes (such as wet etching,dry etching, RIE, or other etching techniques), therefore leavingopenings over the channel regions of fins 204 in place of the removeddummy gate structures. The openings are then filled with dielectricmaterials to form gate dielectric layers 212 by various processes, suchas ALD, CVD, PVD, and/or other suitable process. Metal gate materials(for example, gate electrode 213 including work function components andmetal fill components) are then deposited over the gate dielectriclayers to form metal gate stacks 211. Gate stacks 211 are formed byvarious deposition processes, such as ALD, CVD, PVD, and/or othersuitable process. A CMP process can be performed to remove any excessmaterials of gate stacks 211 and/or spacers 214 to planarize gatestructures 210.

In some embodiments, a height H1 of gate structures 210 as well as thefirst ILD layer 230 along a z-direction is about 30 nm to about 60 nm.

Still referring to FIG. 2, device 200 also includes epitaxial S/Dfeatures 220 formed in the source/drain regions of fins 204. Forexample, semiconductor material (such as silicon germanium (SiGe),silicon phosphide (SiP) or silicon carbide (SiC)) is epitaxially grownon fins 204, forming epitaxial S/D features 220 on fins 204. Infurtherance of some embodiments, epitaxial source/drain features 220extend (grow) laterally along the y-direction, such that epitaxialsource/drain features 220 are merged epitaxial source/drain featuresthat span more than one fin. In some embodiments, epitaxial source/drainfeatures 220 include partially merged portions and/or fully mergedportions. In some other embodiments, epitaxial source/drain features 220are separated over respective fins 204 and are not merged laterally. Anepitaxy process can implement CVD deposition techniques (for example,vapor-phase epitaxy (VPE), ultra-high vacuum CVD (UHV-CVD), LPCVD,and/or PECVD), molecular beam epitaxy, other suitable SEG processes, orcombinations thereof. The epitaxy process can use gaseous and/or liquidprecursors, which interact with the composition of fins 204. In someembodiments, where an N-type FET device is desired, S/D features 220 mayinclude epitaxially grown silicon (epi Si). Alternatively, where aP-type FET device is desired, S/D features 220 may include epitaxiallygrown silicon germanium (SiGe). In some embodiments, S/D features 220may be in-situ doped or undoped during the epitaxy process. In someembodiments, S/D features 220 are doped with n-type dopants (such asphosphorus or arsenic) and/or p-type dopants (such as boron or BF2)depending on a type of FET fabricated in their respective FET deviceregion. In some embodiments, S/D features 220 include materials and/ordopants that achieve desired tensile stress and/or compressive stress inthe channel regions. In some embodiments, epitaxial S/D features 220 aredoped during deposition by adding impurities to a source material of theepitaxy process. In some embodiments, epitaxial S/D features 220 aredoped by an ion implantation process subsequent to a deposition process.In some embodiments, annealing processes are performed to activatedopants in epitaxial S/D features 220 of device 200.

Still referring to FIG. 2, device 200 comprises a first interlayerdielectric (ILD) layer 230 formed over source/drain regions of substrate202, and between gate structures 210. In some embodiment, the first ILDlayer 230 may include silicon oxide (SiO), silicon nitride (SiN),silicon oxynitride (SiON), tetraethylorthosilicate (TEOS) formed oxide,un-doped silicate glass, or doped silicon oxide such asborophosphosilicate glass (BPSG), fused silica glass (FSG),phosphosilicate glass (PSG), boron doped silicon glass (BSG), low-kdielectric material, other suitable dielectric material, or combinationsthereof. Exemplary low-k dielectric materials include FSG, carbon dopedsilicon oxide, Black Diamond® (Applied Materials of Santa Clara,Calif.), Xerogel, Aerogel, amorphous fluorinated carbon, Parylene, BCB,SILK (Dow Chemical, Midland, Mich.), polyimide, other low-k dielectricmaterial, or combinations thereof. The first ILD layer 230 includes adielectric material that is different than a material of spacers 214,especially spacer patter layers 214-2, to achieve etching selectivityduring subsequent etching processes. For example, where spacer patterlayers 214-2 include nitride-rich SiN, wherein a molar ratio of thenitride is about 20% to about 60% (for example, more than 50%), thefirst ILD layer 230 includes oxide-rich SiO₂, wherein a molar ratio ofthe oxide is about 20% to about 60% (for example, more than 50%). Insome embodiments, the first ILD layer 230 has a multilayer structurehaving multiple dielectric materials. In some embodiments, the first ILDlayer 230 may be formed by a deposition process (such as CVD, FCVD, PVD,ALD, HDPCVD, MOCVD, RPCVD, PECVD, LPCVD, ALCVD, APCVD, plating, othersuitable methods, or combinations thereof) to cover substrate 202, S/Dfeatures 220 and gate structures 210. Subsequent to the deposition ofthe first ILD layer 230, a CMP process and/or other planarizationprocess may be performed to expose gate structures 210.

Now referring to FIGS. 1 and 3, at operation 104, gate structures 210including gate stacks 211 and spacers 214 are recessed such that each ofthe gate stacks 211 and spacers 214 has a top surface below a topsurface of the first ILD layer 230. In some embodiments, as depicted inFIG. 3, gate stacks 211 and spacers 214 are recessed to differentheights such that a top surface of gate stacks 211 is below a topsurface of spacers 214, and both below a top surface of the first ILDlayer 230. The recessing process may comprise more than one steps. Forexample, in a first step, gate structures 210 including gate stacks 211and spacers 214 are recessed to a height H2, which is less than a heightH1 of the first ILD layer 230; subsequently, in a second step, gatestacks 211 are further recessed to a height H3 which is less than theheight H2 of spacers 214. The recess processes may include differentetching processes, for example, dry etch, wet etch, or a combinationthereof. In some embodiments, gate structures 210 including gate stacks211 and spacers 214 are recessed via selective dry etching from a heightH1 to a height H2, and then the gate stacks 211 are further recessed viaa combination of wet etching and dry etching to a height H3. In thedepicted embodiment, a T-shape trench 218 is formed over gate structures210 including gate stack 211 and spacers 214 and between the first ILDlayer 230. As depicted in FIG. 3, trench 218 includes a top portion218-1 and a bottom portion 218-2, which forms a cross view of a “T”shape in the x-z plane, wherein the top portion 218-1 has a largeropening than the bottom portion 218-2. In the depicted embodiment, topportion 218-1 of trench 218 is over the top surface of spacers 214 andsurrounded by a portion of sidewalls of the first ILD layer 230 andbottom portion 218-2 of trench 218 is over the top surface of gate stack211 and below the top surface of spacers 214 and is surrounded by aportion of sidewalls of spacers 214.

In some embodiments, the height H1 of the first ILD layer 230 along thez-direction is about 30 nanometers (nm) to about 60 nm; the height H2 ofspacer 214 along the z-direction is about 20 nm to about 40 nm which isabout 5 nm to about 20 nm lower than the height H1 of the first ILDlayer 230. In some further embodiments, the height H2 of spacers 214 isabout 50% to about 80% of the height H1 of the first ILD layer 230. Insome embodiment, the height H3 of gate stack 211 along the z-directionis about 5 nm to about 20 nm, which is about 10 nm to about 30 nm lowerthan the height H2 of spacers 214. In some further embodiments, theheight H3 of gate stack 211 is about 30% to about 50% of the height H2of spacers 214, which is about 20% to about 40% of the height H1 of thefirst ILD layer 230. In the depicted embodiment of FIG. 3, the height H1of the first ILD layer 230 is about 40 nm, the height H2 of spacers 214is about 30 nm, and the height H3 of gate stack 211 is about 10 nm. In aconvention structure of the semiconductor device, the spacer is aboutthe same height as the ILD layer; and a height of the gate electrode isabout 50% of the height of the spacer and the ILD layer. Therefore, inthe present disclosure, the height difference between the gate stack 211and the spacers 214 is larger compare to the convention structure of thesemiconductor device, and further the height difference between the gatestack 211 and the first ILD layer 230 is larger compare to theconvention structure of the semiconductor device. This may enlarge thedistance between the gate stack 211 and the later formed S/D via 280(shown in FIG. 18). In addition, T-shape trench 218 will be filled withlow-k ILD material (shown in FIG. 18) which can provide better isolationthan the material of spacers 214. Thereby, the isolation between thegate electrode and the S/D via and the isolation between the S/Dcontacts and the gate via in the present disclosure is improved, theleakage issue caused by the overlay shifting during the fabrication maybe mitigated.

Referring to FIGS. 1, 4, and 5A, at operation 106, a first metal layer240 is deposited over gate stacks 211. As depicted in FIG. 5A, the firstmetal layer 240 is disposed to substantially cover the entire topsurface of the gate stack 211, along both the x-direction (gate lengthdirection) and the y-direction (a direction that is perpendicular to thegate length direction). As depicted in FIG. 4, a top surface of thefirst metal layer 240 is below the top surface of spacer 214. And, thefirst metal layer 240 laterally contacts the sidewalls of spacers 214.In some embodiment, the first metal layer 240 comprises metal materialssuch as tungsten (W), cobalt (Co), aluminum (Al), zirconium (Zr), gold(Au), platinum (Pt), copper (Cu), ruthenium (Ru), metal compound, orcombinations thereof. In some embodiments, the material of the firstmetal layer 240 is different than the material of gate stacks 211. Insome further embodiments, the material of the first metal layer 240 isthe same as the gate via 290 (shown in FIG. 18) formed later. In someembodiments, the first metal layer 240 is formed by a bottom-up growprocess from gate stacks 211. A catalyst comprising tungsten may beapplied to facilitate the bottom-up growth of the first metal layer 240.In some embodiments, a thickness H4 of the first metal layer 240 isabout 10% to about 30% of a height H3 of gate stack 211. For example, athickness H4 of the first metal layer 240 along the z-direction is about1 nm to about 10 nm. In the depicted embodiment of FIG. 4, the thicknessH4 of the first metal layer 240 is about 3 nm.

In the depicted embodiment, the first metal layer 240 is grown to coverthe entire top surface of gate stack 211, even though the top surface ofgate stack 211 may or may not be flat after the recess process ofoperation 104. FIGS. 5B-5F illustrates cross-section views of thecontact profile between the first metal layer 240 and gate stack 211along plane B-B of FIG. 5A according to various embodiments of thepresent disclosure. As depicted in FIGS. 5B-5F, gate stack 211 maycomprises a gate dielectric layer 212 comprising high-k dielectricmaterials. The dielectric layer may be disposed as a U-shape along thesidewalls of spacers 214 and over the top surface of substrate 202. Gatestack 211 also comprises a gate electrode 213 including a work-functionlayer and a filled metal layer. The work-function layer compriseswork-function metal material and may be formed conformally along thegate dielectric layer 212. The filled metal layer comprises metalmaterial and may be disposed to fill in a trench formed in thework-function layer. Gate stack 211 may comprise other layers which arenot shown in FIGS. 5B-5F. Therefore, a top surface of gate stack 211 maycomprise high-k dielectric materials (gate dielectric layer 212) andconductive/metal materials (gate electrode 213). Due to differentetching rate of the different materials, a top surface of gate stack 211after the recess process of operation 104 may be of various shapes, asdepicted in FIGS. 5B-5F. For example, a top surface of gate stack 211may be a flat surface (FIG. 5B), a stepped U-shape (FIG. 5C), acontinuous U-shape (FIG. 5D), a stepped ∩-shape (FIG. 5E), or acontinuous ∩-shape (FIG. 5F). No matter what shape the top surface ofgate stack 211 is, the first metal layer 240 is bottom-up grown from themetal/conductive materials and extending to the dielectric materials tocover the entire surface of gate stack 211, conformally ornon-conformally.

As shown in FIG. 5A, the contact surface between gate stacks 211 and thefirst metal layer 240 is the entire top surface of the gate stack 211,which is much larger than the contact surface between the gate via andthe gate electrode as in a conventional structure. In addition, thefirst metal layer 240 may include a same conductive material as thelater formed gate via 290, the resistance between the gate via and thefirst metal layer is very small and may be ignored. Thereby, since thecontact resistance is inversely proportional to the contact area, thecontact resistance between the metal gate (for example, gate stacks 211)and the gate via (for example, gate via 290 recited in FIG. 18) may bereduced, and the device performance may be improved.

Still referring to FIGS. 1 and 4, at operation 108, a sacrificial layer242 is deposited over substrate 202. A material of sacrificial layer 242may comprises silicon, silicon compound, nitride compound, oxidecompound, for example, silicon oxide (SiO), silicon nitride (SiN),silicon oxynitride (SiON), silicon carbonitride (SiCN), siliconoxycarbonitride (SiOCN), other dielectric materials, or combinationsthereof. In some embodiment, a material of sacrificial layer 242 isdifferent (have different etching selectivity) than a material ofspacers 214 and the first ILD layer 230. For example, sacrificial layer242 includes silicon-rich SiN, wherein a molar ratio of the silicon isabout 20% to about 60% (for example, more than 50%); spacer patternlayers 214-2 includes nitride-rich SiN, wherein a molar ratio of thenitride is about 20% to about 60% (for example, more than 50%), and thefirst ILD layer 230 includes oxide-rich SiO₂, wherein a molar ratio ofthe oxide is about 20% to about 60% (for example, more than 50%).Sacrificial layer 242 may be deposited by CVD, PVD, ALD, otherdeposition process, or combinations thereof. A planarization process(for example, CMP) may then be applied to remove the top portion ofsacrificial layer 242 until the first ILD layer 230 is exposed.

Referring to FIGS. 1 and 6, at operation 110, the first ILD layer 230 isetched along sidewalls of sacrificial layer 242 and spacers 214(specially spacer patter layer 214-2), therefore leaving contactopenings 244 over the source/drain regions of device 200 in place of theremoved first ILD layer. Since a material of the first ILD layer 230 hasdifferent etching selectivity than a material of spacer pattern layer214-2 and the sacrificial layer 242, a selective etching process onlyremoves the first ILD layer 230 without damage spacers 214 andsacrificial layer 242. In some embodiments, as depicted in FIG. 6, thefirst ILD layer 230 is substantially completely removed, thus contactopenings 244 have bottom surfaces over the source/drain regions ofdevice 200 and sidewalls formed by the sidewalls of spacers 214 andsidewalls of sacrificial layer 242. In some embodiments, the first ILDlayer 230 may not be completely removed. In a later process, conductivematerials (i.e. S/D contacts 250 in FIG. 7) may be filled in contactopenings 244 to form S/D contacts 250, such that the critical dimension(CD) of the source/drain contacts may be maximized by this self-alignedS/D contacts formation process which is helping in reducing the S/Dresistance and enlarging the S/D via alignment window. In someembodiments, the selective etching process to the first ILD layer 230may include wet etching, dry etching, RIE, or combinations thereof.

Referring to FIGS. 1 and 7, at operation 112, conductive materials aredeposited in contact openings 244 to form S/D contacts 250. In someembodiments, S/D contacts 250 may comprise tungsten (W), cobalt (Co),tantalum (Ta), titanium (Ti), aluminum (Al), zirconium (Zr), gold (Au),platinum (Pt), copper (Cu), ruthenium (Ru), metal compound such astitanium nitride (TiN), tantalum nitride (TaN), or combinations thereof.S/D contacts 250 may be formed by suitable deposition process, such asCVD, PVD, ALD, and/or other suitable process. A CMP process may beperformed to remove any excess material of S/D contacts 250 such thatthe top surface of S/D contacts 250 is substantially coplanar withsacrificial layer 242. In the depicted embodiment of FIG. 7, a heightS/D contacts 250 along the z-direction is the same as H1, which is about30 nm to about 60 nm. As discussed above, due to the self-alignedformation process, the CD of S/D contacts 250 is maximized.

Referring to FIGS. 1 and 8, at operation 114, sacrificial layer 242 isremoved. Because of the high selective etching ratio between thematerial of sacrificial layer 242 (for example, including silicon-richSiN) and spacers 214 (for example, including nitride-rich SiN), aselective dielectric etching process may be applied to removesacrificial layer 242. The selective dielectric etching maysubstantially completely remove the sacrificial layer 242 and stop onspacers 214 and the metal layers including the first metal layers 240and the S/D contacts 250.

Referring to FIGS. 1 and 9, at operation 116, a first isolation feature246 is deposited in T-shape trench 218 over substrate 202. In someembodiments, the first isolation feature 246 may comprises a dielectricmaterial including, for example, silicon oxide (SiO), silicon nitride(SiN), silicon oxynitride (SiON), silicon oxycarbonitride (SiOCN)silicon carbonitride (SiCN), other silicon compound, nitride compound,oxide compound, or combinations thereof. The material of the firstisolation feature 246 should provide good hardness and good isolationbetween the conductive materials of different contacts and/or viasaccording to the design requirement of device 200. In someimplementations, the first isolation feature 246 may include amultilayer structure having multiple dielectric materials. The firstisolation feature 246 is conformally formed in T-shape trench 218 by adeposition process. In the depicted embodiment of FIG. 9, the firstisolation feature 246 is conformally formed by an ALD process over thefirst metal layer 240, extending along a top portion of the sidewalls ofspacers 214 (that is above the top surface of the first metal layer 240)to the top surface of spacers 214, further extending along the sidewallsof a top portion of S/D contacts 250 (that is above the top surface ofspacers 214) to the top surface of S/D contacts 250. In the depictedembodiment, the first isolation feature 246 are conformally depositedsuch that the thicknesses of the first isolation feature 246 alongdifferent directions are substantially the same. In some embodiments, athickness of the first isolation feature 246 is about 10% to about 30%of a height of the gate electrode. For example, the thickness of thesecond hard mask layer is about 1 nm to about 10 nm. In the depictedembodiment of FIG. 9, the thickness of the first isolation feature 246is about 3 nm. Since the first isolation feature 246 is conformallydeposited in T-shape trench 218, smaller T-shape openings 218′ formedabove the first isolation feature 246, as depicted in FIG. 9. T-shapeopenings 218′ has a cross view of a “T” shape in the x-z plane, where atop portion has a larger opening than a bottom portion of T-shapeopenings 218′. Compare with a convention structure where no extradielectric layer is provided between various contacts and vias, thefirst isolation feature 246 in the present disclosure can provideenhanced isolation between the source/drain contact (for example, theS/D contacts 250) and the gate via (for example, gate via 290 in FIG.18) and between the metal gate (for example, the gate stack 211) and theS/D via (for example, S/D via 280 in FIG. 18), thereby can mitigate thecurrent leakage issue caused by the overlay shifting during thefabrication.

Still referring to FIGS. 1 and 10, at operation 118, a second ILD layer248 is deposited over the first isolation feature 246. The second ILDlayer 248 fills up the smaller T-shaped trenches 218′ surrounded by thefirst isolation feature 246. In some embodiments, the second ILD layer248 may comprise low-k dielectric material, silicon oxide (SiO), siliconnitride (SiN), silicon oxynitride (SiON), TEOS formed oxide, PSG, BPSG,other suitable dielectric material, or combinations thereof. In someimplementations, the second ILD layer 248 has a multilayer structurehaving multiple dielectric materials. The second ILD layer 248 is formedover the first isolation feature 246 by a deposition process, such asCVD, FCVD, PVD, ALD, HDPCVD, MOCVD, RPCVD, PECVD, LPCVD, ALCVD, APCVD,plating, other suitable methods, or combinations thereof.

Referring to FIGS. 1 and 11, still at operation 118, a planarizationprocess, such as a CMP, may be applied to remove any excess materials ofthe first isolation feature 246 and the second ILD layer 248 to expose atop surface of S/D contacts 250.

Referring to FIGS. 1 and 12, at operation 120, a top portion of the S/Dcontacts 250 is removed such that the S/D contacts 250 is recessed froma height H1 to a height H5. In some embodiments, as depicted in FIG. 12,the height H5 of the recessed S/D contacts 250 is larger than the heightH2 of spacers 214. In other words, a top surface of the recessed S/Dcontacts 250 is above a top surface of spacers 214. Accordingly, thesidewalls of the recessed S/D contacts 250 contact with both thesidewalls of spacers 214 and the sidewalls of the first isolationfeature 246. In some other embodiments, the height H5 of the recessedS/D contacts 250 may be less than the height H2 of spacers 214. In otherwords, a top surface of the recessed S/D contacts 250 is below a topsurface of spacers 214. Accordingly, the sidewalls of the recessed S/Dcontacts 250 only contact the sidewalls of spacers 214 but do notcontact the sidewalls of the first isolation feature 246. In someembodiments, the S/D contacts 250 are recessed by a reactive ion etching(RIE) process. For example, a chemical reaction plasma is generated byan electromagnetic field. High-energy ions from the plasma are releasedand attack the top surface of the S/D contacts 250 and react with it.The reaction time is controlled such that the S/D contacts 250 can beetched to a proper height H5 according to the design requirement ofdevice 200. In some embodiments, the S/D contacts 250 is recessed for anextent of H6 to reach the height H5 (H5+H6=H1). In some embodiments, therecessed extent H6 is about 10% to about 60% of the height H3 of thegate stack 211. For example, the recessed extent H6 is about 1 nm toabout 20 nm. In the depicted embodiment of FIG. 12, the recessed extentH6 is about 10 nm.

Referring to FIGS. 1, 13, and 14, at operation 122, a second isolationfeature 252 is formed over S/D contact 250. In some embodiments, adielectric material of the second isolation feature 252 includes siliconoxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), siliconoxycarbonitride (SiOCN) silicon carbonitride (SiCN), other siliconcompound, nitride compound, oxide compound, or combinations thereof. Thematerial of the second isolation feature 252 should provide goodhardness and good isolation between the conductive materials ofdifferent contacts and/or vias according to the design requirement ofdevice 200. In some embodiments, the material of the second isolationfeature 252 may be the same as the material of the first isolationfeature 246. In some other embodiments, the material of the secondisolation feature 252 may include different material than the firstisolation feature 246. The second isolation feature 252 may be formed byany suitable process. For example, as depicted in FIG. 13, in a firststep, an isolation layer 252′ is conformally deposited by an ALD processover substrate 202, especially over S/D contacts 250, the firstisolation feature 246, and the second ILD layer 248. Subsequently in asecond step, as depicted in FIG. 14, the isolation layer 252′ areanisotropically etched such that only portions of the isolation layer252′ along the x-direction are removed, and portions of the isolationlayer 252′ along the z-direction are remained. The remained portions ofthe isolation layer 252′ form the second isolation feature 252. In thedepicted embodiment, the second isolation feature 252 is disposed aboveS/D contacts 250 with the outer edges align with the sidewalls of S/Dcontacts 250 and the inner edges enclosing a trench formed therein. Thesecond isolation feature 252 has a height H6 in the z-direction which isequal to the etching extent H6 of S/D contacts 250. In some embodiments,the height H6 is about 1 nm to about 20 nm, which is about 10% to about60% of the height H3 of the gate electrode. In the depicted embodimentof FIG. 14, the height H6 is about 10 nm. Compare with a conventionalstructure where no extra isolation feature/layer is provided between thevarious contacts and vias, in the present disclosure, the secondisolation feature 252, independently or combined with the firstisolation feature 246, may provide better isolation between variouscontacts and vias (for example, S/D contacts 250 and gate vias 290, ormetal gate stacks 211 and S/D vias 280 illustrated in FIG. 18). Thus,the current leakage issue caused by the overlay shifting during thefabrication may be mitigated and the performance of the semiconductormay be improved.

Referring to FIGS. 1, 15, and 16, at operation 124, a second metal layer254 is deposited in the trench formed within the second isolationfeature 252 and above S/D contacts 250. In some embodiments, thematerial of the second metal layer 254 may be the same as or differentthan the first metal layer 240. In some further embodiments, thematerial of the second metal layer 254 may be different than thematerial of S/D contacts 250. In some furtherer embodiments, thematerial of the second metal layer 254 is the same as the material ofS/D via 280 (shown in FIG. 18) formed later. In some embodiments, thematerial of the second metal layer 254 comprises, W, Co, Al, Zr, Au, Pt,Cu, Ru, metal compound, or any combinations thereof. In someembodiments, the second metal layer 254 may be bottom-up grown from S/Dcontacts 250, or by other suitable process similar as the fabrication ofthe first metal layer 240. In some embodiments, the bottom-up grownthickness of the second metal layer 254 along the z-direction issubstantially the same as the thickness H6 of the second isolationfeature 252, which is about 10% to about 60% of the height H3 of thegate stacks 211. For example, the thickness H6 of the second metal layer254 is about 1 nm to about 20 nm. In the depicted embodiment of FIG. 15,the thickness H6 of the second metal layer 254 is about 10 nm. Asdepicted in FIG. 16, the second metal layer 254 is deposited between thesecond isolation feature 252 and extending along the entire length ofS/D contact in the y-direction (the direction that is perpendicular tothe direction of the gate length) over S/D contact 250. In other words,the contact surface between the second metal layer 254 and the secondisolation feature 252 and S/D contact 250 is the entire top surface ofS/D contact 250 which is much larger than the contact surface of the S/Dvia and the S/D contact in a conventional structure. Similar as thefirst metal layer 240, the second metal layer 254 has the same materialas the S/D via and enlarge the contact surface between the S/D via andthe S/D contact. Thereby, the contact resistance between the S/Dcontacts and the S/D via is reduced, and the performance of thesemiconductor device may be improved.

Referring to FIGS. 1 and 17, at operation 126, a contact etch stop layer(CESL) 260 is formed over substrate 202. In some embodiments, CESL 260includes a dielectric material comprising silicon and nitrogen (forexample, SiN or SiON). Also, at operation 126, a third ILD layer 270 isformed over CESL 260 and over substrate 202. In some embodiments, thethird ILD layer 285 includes a dielectric material including, forexample, SiO, SiN, SiON, TEOS formed oxide, PSG, BPSG, low-k dielectricmaterial (K<3.9), other suitable dielectric material, or combinationsthereof. The third ILD layer 270 includes a dielectric materialdifferent than CESL 260. In some embodiments, where CESL 260 includessilicon and nitride, the third ILD layer 270 includes a low-k dielectricmaterial different than the dielectric material of CESL 260. In someembodiments, the third ILD layer 270 may have a multilayer structurehaving multiple dielectric materials. The third ILD layer 270 and/orCESL 260 are formed over substrate 202, for example, by a depositionprocess (such as CVD, FCVD, PVD, ALD, HDPCVD, MOCVD, RPCVD, PECVD,LPCVD, ALCVD, APCVD, plating, other suitable methods, or combinationsthereof). Subsequent to the deposition of CESL 260 and/or the third ILDlayer 270, a CMP process and/or other planarization process is performedto planarize the top surface of device 200. In some embodiments, athickness along the z-direction of CESL layer 260 is about 1 nm to about10 nm, and a thickness along the z-direction of the third ILD layer 270is about 5 nm to about 30 nm.

Referring to FIGS. 1 and 18, at operation 128, S/D vias 280 and gatevias 290 are formed over substrate 202 through CESL 260 and the thirdILD layer 270. The material of S/D vias 280 and gate vias 290 maycomprise, W, Co, Al, Zr, Au, Pt, Cu, metal compound, or any combinationsthereof. To reduce the contact resistance between the source/drain vias280 and the source/drain contacts 250, S/D vias 280 comprise the samematerial as the second metal layer 254. To reduce the contact resistancebetween the gate vias 290 and gate stacks 211, gate vias 290 comprisethe same material as the first metal layer 240.

Forming of S/D vias 280 and gate vias 290 may comprises variousprocesses. For example, in a first step, contact openings may be formedby photolithography, and/or etching processes. An exemplaryphotolithography process includes forming a photoresist layer (resist)overlying the third ILD layer 270, exposing the resist to a pattern,performing a post-exposure bake process, and developing the resist toform a masking element including the resist. The masking element is thenused to etch the contact openings into the third ILD layer 270 and CESL260, as well as the second ILD layer 248 and the first isolation feature246 disposed over the first metal layer 240. The etching process maystop on the metal materials, for example, the first metal layer 240and/or the second metal layer 254. The etching process may include a dryetching process, a wet etching process, other suitable etching process,or combinations thereof. The patterned resist layer may be removedbefore or after the etching process. Conductive materials are thendeposited into the contact openings to form S/D vias 280 and gate vias290.

FIG. 19 is a three-dimensional perspective view showing the contactprofiles between S/D via 280, the second metal layer 254, and S/Dcontact 250. As depicted in FIG. 19, S/D via 280 and the second metallayer 254 comprise the same material (thus the resistance between S/Dvia 280 and the second metal layer 254 may be ignored) and a contactsurface between S/D via 280 and S/D contacts 250 is enlarged by thesecond metal layer 254 therebetween, therefore the contact resistancebetween S/D contacts 250 and S/D via 280 can be reduced.

Similarly, FIG. 20 is a three-dimensional perspective view showing thecontact profiles between gate via 290, the first metal layer 240, andgate stack 211. As depicted in FIG. 20, gate via 290 and the first metallayer 240 comprise the same material (thus the resistance between gatevia 290 and the first metal layer 240 may be ignored), and a contactsurface between the gate via 290 and the gate stack 211 is enlarged bythe first metal layer 240 therebetween, therefore the contact resistancebetween the metal gate (gate stack 211) and gate via 290 can be reduced.Accordingly, the performance of device 200 is improved.

In addition, as indicated in FIG. 18, various conductive contacts andvias, (for example, gate via 290 and source/drain contact 250, or metalgate stacks 211 and S/D via 280) are not only isolated by spacers 214,but also by the second ILD layer 248, the first isolation feature 246and the second isolation feature 252. In the depicted embodiment, a topsurface of gate stack 211 is lower than a top surface of spacers 214,and a top surface of spacers 214 is lower than a top surface of thesecond metal layer 254 (i.e. a bottom surface of S/D via 280).Therefore, in the present disclosure, the distance between gate stack211 and S/D vias 280 is larger compared to a conventional structure. Inaddition, spacers 214 are recessed to be lower than a top surface of thesecond metal layer 254 (i.e. a bottom surface of the S/D vias 280), suchthat the top portion of the T-shape opening can be filled by the secondILD layer 248 and/or the first isolation feature 246 which can providebetter isolation between various contacts and vias than spacers 214.Furthermore, the second isolation feature 252 disposed over S/D contact250 and between the second metal layer 254 may further enhance theisolation between various contacts and vias. Accordingly, the currentlyleakage between the S/D contact and the gate via and between the metalgate and the S/D via may be mitigated compared to the conventionalstructure. Thus, the performance of device 200 is improved.

Referring to FIG. 1, at operation 130, method 100 performs furtherprocessing to complete the fabrication of device 200. For example, itmay form other contact openings, contact metal, as well as various othercontacts, vias, wires, and multilayer interconnect features (e.g., metallayers and interlayer dielectrics) over device 200, configured toconnect the various features to form a functional circuit that mayinclude the semiconductor devices.

FIGS. 21-23 provide various embodiments of device 200 according to thepresent disclosure. The isolation features 246 and 252 are optional andone or both of them may be eliminated in these various embodiments.

For example, referring to FIG. 21, the second isolation feature 252 isnot disposed over S/D contact 250 and is eliminated between the secondmetal layer 254 and the first isolation feature 246, such that thesecond metal layer 254 directly contacts the first isolation feature246, and the edges of the second metal layer 254 aligns with thesidewalls of S/D contact 250. As depicted in FIG. 20, the firstisolation feature 246 is disposed over a top surface of the first metallayer 240, extending along the sidewalls of the spacers 214 to the topsurface of spacers 214, and further extending along the sidewalls of thesecond metal layer 254. The first isolation feature 246 is disposed toprovide better isolation between gate via 290 and S/D contacts 250, andbetween S/D via 280 and gate stack 211. In the depicted embodiment ofFIG. 21, the contact area between the second metal layer 254 and the S/Dcontact 250 is the entire top surface of the S/D contact 250 along thex-direction and the y-direction. The metal layers 240 and 254 (havingthe same material as S/D via 280 and gate 290, respectively) aredisposed between the contacts (for example, S/D contacts 250 and gatestacks 211) and the vias (for example, S/D vias 280 and gate vias 290),respectively, to reduce the resistances between the contact and thevias.

Referring to FIG. 22, the first isolation feature 246 is not disposedconformally in the T-shape trench 218 between gate via 290, spacers 214,and S/D contacts 250. The top portion of the T-shape trench 218 overspacers 214 are filled by only the second ILD layer 248. The secondisolation feature 252 is disposed between the second ILD layer 248 andthe second metal layer 254 to provide further isolation between S/Dcontact 250 and the gate via 290 and between the gate stack 211 and S/Dvia 280. The metal layers 240 and 254 are disposed between the contacts(for example, the S/D contacts 250 and gate stacks 211) and the vias(for example, S/D vias 280 and gate vias 290), respectively, to reducethe resistances between the contacts and the vias.

Referring to FIG. 23, both the first isolation feature 246 and thesecond isolation feature 252 are eliminated. In the depicted embodiment,the top portion of the T-shape trench 218 over spacers 214 are filled byonly the second ILD layer 248. The isolation between the gate stack 211and the S/D via 280 and between the S/D contact 250 and the gate via 290are enhanced by the second ILD layer 248. The contact area between thesecond metal layer 254 and the S/D contact 250 is the entire top surfaceof the S/D contact 250 along the x-direction and the y-direction. Themetal layers 240 and 254 are disposed between the contacts (for example,the S/D contacts 250 and gate stacks 211) and the vias (for example, S/Dvias 280 and gate vias 290), respectively, to reduce the resistancesbetween the contact and the vias.

Although not intended to be limiting, one or more embodiments of thepresent disclosure provide many benefits to a semiconductor device and aformation process thereof. For example, embodiments of the presentdisclosure provide a semiconductor device includes metal layers betweenthe contacts and the vias (for example, between the S/D contacts and theS/D vias, and/or between the metal gates and the gate vias). The metallayers comprise the same material as the vias and enlarge the contactsurface between the contacts and the vias, thus the contact resistancebetween the contacts and the corresponding vias are reduced. Thesemiconductor device of the present disclosure may also includeisolation features between the various contacts and vias, for example,between the S/D contacts and the gate vias. The isolation featuresprovide further isolation other than the spacers between the contactsand the vias, which may mitigate the current leakage issue due to theshort path between the various contacts and vias. Therefore, theperformance of the semiconductor device may be improved.

The present disclosure provides for many different embodiments.Semiconductor device having metal layers and hard mask layers betweencontact and vias and methods of fabrication thereof are disclosedherein. An exemplary semiconductor device comprises a gate structuredisposed over a substrate and over a channel region of the semiconductordevice. The gate structure includes a gate stack and spacers disposedalong sidewalls of the gate stack. The gate stack includes a gatedielectric layer and a gate electrode. The semiconductor device furthercomprises a first metal layer disposed over the gate stack, wherein thefirst metal layer laterally contacts the spacers over the gatedielectric layer and the gate electrode. The semiconductor devicefurther comprises a gate via disposed over the first metal layer.

In some embodiments, a top surface of the first metal layer is below atop surface of the spacers. In some embodiments, a material of the firstmetal layer is the same as a material of the gate via.

In some embodiments, the semiconductor device further comprises asource/drain (S/D) contact disposed over a source/drain region of thesemiconductor device; a S/D via disposed over the source/drain contact;and a second metal layer disposed between the S/D contacts and the S/Dvia, wherein a bottom surface of the second metal layer contacts a topsurface of the S/D contact, and an area of the bottom surface of thesecond metal layer is greater than an area of a bottom surface of theS/D via.

In some embodiments, a material of the second metal layer is same as amaterial of the S/D via. In some embodiments, a top surface of thespacer is below a top surface of the second metal layer.

In some embodiments, the semiconductor device further comprises a firstisolation feature formed over a top surface of the first metal layer,extending along sidewalls of the spacers to a top surface of thespacers, and further extending along a sidewall of the second metallayer.

In some embodiments, the semiconductor device further comprises a secondisolation feature disposed over the S/D contact and along sidewalls ofthe second metal layer, wherein a sidewall of the second dielectriclayer facing away from the second metal layer aligns with a sidewall ofthe S/D contact and a sidewall of the second dielectric layer towardsthe second metal layer encloses the second metal layer.

Another exemplary semiconductor device comprises a substrate including achannel region formed between source/drain (S/D) regions and a gatestructure disposed over the channel region of the substrate, wherein thegate structure includes a gate stack and spacers disposed alongsidewalls of the gate stack, and a top surface of the spacers is above atop surface of the gate stack. This another exemplary semiconductordevice further comprises source/drain (S/D) contacts disposed over theS/D regions of the substrate; a first metal layer disposed over the S/Dcontacts; a S/D via having a same material as the first metal layerdisposed over the first metal layer, wherein an area of a bottom surfaceof the S/D via is less than an area of a bottom surface of the firstmetal layer; and an interlayer dielectric (ILD) layer formed over thegate structure, wherein a top portion of the ILD layer extends over thetop surface of the spacers.

In some embodiments, a height ratio between the gate stack and thespacer is about 20% to about 50%.

In some embodiments, this another semiconductor device further comprisesa second metal layer disposed over the gate structure, wherein a topsurface of the second metal layer is lower than the top surface of thespacers; and a gate via dispose over the second metal layer, wherein amaterial of the gate via is same as a material of the second metal layerand an area of a bottom surface of the gate via is less than an area ofa bottom surface of the second metal layer.

In some embodiments, this another semiconductor device further comprisesa first isolation feature disposed over the second metal layer,extending along sidewalls of the spacers to a top surface of thespacers, and further extending along a sidewall of the first metallayer.

In some embodiments, this another semiconductor device further comprisesa second isolation feature disposed over the S/D contact and along asidewall of the first metal layer, wherein the second isolation featureincludes a first sidewall facing away from the first metal layer and asecond sidewall towards the first metal layer, the first sidewall of thesecond isolation feature is align with a sidewall of the S/D contact andthe second sidewall of the second isolation feature encloses the firstmetal layer.

In some embodiments, the bottom surface of the first metal layer and abottom surface of the second isolation feature contact a top surface ofthe S/D contact.

An exemplary method comprises forming a fin over a substrate; forming agate structure over a channel region of the fin, wherein the gatestructure includes a gate stack and spacers disposed along sidewalls ofthe gate stack, the gate stack including a gate dielectric layer and agate electrode; epitaxially growing a source/drain (S/D) feature over asource/drain region of the fin; forming a first interlayer dielectric(ILD) layer over the S/D feature and the substrate, recessing the gatestructure including the spacers and the gate stack, such that a topsurface of the spacers is lower than a top surface of the first ILDlayer and a top surface of the gate stack is lower than the top surfaceof the spacers; and forming a first metal layer, by a bottom-up growprocess, over the gate stack, wherein the first metal layer covers thetop surface of the gate stack including the gate dielectric layer andthe gate electrode.

In some embodiments, recessing the gate structure comprises etching thespacers and the gate stack together, such that the top surface of thespacers and the gate stack is lower than the top surface of the firstILD layer; and further etching the gate stack, such that the top surfaceof the gate electrode is lower than the top surface of the spacers, anda T-shape trench is formed over the gate stack and the spacers.

In some embodiments, the method further comprises etching the first ILDlayer to form a S/D contact opening; forming a S/D contact in the S/Dcontact opening; depositing a second ILD layer over the first metallayer and the spacers; and forming a gate via through the second ILDlayer and contacting the first metal layer, wherein the gate viaincludes a same material as the first metal layer and an area of abottom surface of the gate via is smaller than an area of a bottomsurface of the first metal layer.

In some embodiments, the method further comprises forming a firstisolation feature after forming the first metal layer and beforedepositing the second ILD layer, wherein the first isolation feature isdeposited over a top surface of the first metal layer, extending alongsidewalls of the spacers, over the top surface of the spacers, andfurther along a sidewall of the S/D contact.

In some embodiments, the method further comprises recessing a topportion of the S/D contact; and forming a second isolation feature overthe recessed S/D contact, wherein the second isolation feature includesa first sidewall contacting the first isolation feature and a secondsidewall facing away from the first isolation feature, the firstsidewall is align with a sidewall of the recessed S/D contact, thesecond sidewall forms a trench therein and a portion of a top surface ofthe recessed S/D contacts is exposed through the trench.

In some embodiments, the method further comprises forming a second metallayer to cover the top surface of the recessed S/D contacts exposed inthe trench; and forming a S/D via over the second metal layer, whereinthe S/D via includes a same material as the second metal layer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method comprising: forming a gate structure ona fin structure, the gate structure including a gate stack and a firstsidewall spacer disposed along a sidewall of the gate stack, the gatestack including a gate electrode layer and a gate dielectric layer;forming a first interlayer dielectric layer over the gate structure;recessing the gate stack and the first sidewall spacer such thatrespective top surfaces of the gate stack and the first sidewall spacerare lower than a top surface of the first interlayer dielectric layer;forming a first metal layer directly on the top surface of the gatestack, wherein a top surface of the first metal layer is below the topsurface of the first sidewall spacer after the forming of the firstmetal layer directly on the top surface of the gate stack; forming afirst isolation layer on the first metal layer and the first sidewallspacer; forming a first trench through the first isolation layer toexpose a portion of the first metal layer; and forming a firstconductive feature on the exposed portion of the first metal layer inthe trench.
 2. The method of claim 1, further comprising: forming asacrificial layer on the first metal layer and the first sidewall spacerprior to forming the first isolation layer on the first metal layer andthe first sidewall spacer; forming a second trench through the firstinterlayer dielectric layer and the sacrificial layer; forming a secondconductive feature in the second trench.
 3. The method of claim 2,further comprising removing the sacrificial layer to expose the topsurface of the first metal layer and a sidewall surface of the secondconductive feature.
 4. The method of claim 3, wherein the forming of thefirst isolation layer on the first metal layer and the first sidewallspacer includes forming the first isolation layer directly on theexposed top surface of the first metal layer and directly on thesidewall surface of the second conductive feature.
 5. The method ofclaim 1, further comprising forming a second interlayer dielectric layerdirectly on the first isolation layer, wherein the second interlayerdielectric layer extends below the top surface of the first sidewallspacer, and wherein the forming of the first trench through the firstisolation layer to expose the portion of the first metal layer includesforming the first trench through the second interlayer dielectric layer.6. The method of claim 1, further comprising: forming a second trenchthrough the first interlayer dielectric layer; forming a secondconductive feature in the second trench; removing a first portion of thefirst isolation layer to expose a first portion of the second conductivefeature; and removing the first portion of the second conducive feature.7. The method of claim 6, wherein a second portion of the secondconductive feature remains after the removing of the first portion ofthe second conducive feature, the second portion of the secondconductive feature having a top surface that is above the top surface ofthe first sidewall spacer.
 8. A method comprising: forming a gatestructure on a fin, the gate structure including a gate electrode layerand a gate dielectric layer; forming a source/drain feature on the fin;forming a first interlayer dielectric layer over the gate structure;recessing the gate structure such that a top surface of the gatestructure is lower than a top surface of the first interlayer dielectriclayer; forming a first metal layer directly on at least one of the gateelectrode layer and the gate dielectric layer; forming a firstconductive feature extending through the first interlayer dielectriclayer to the source/drain feature; forming a first isolation layerdirectly on the first metal layer; forming a second isolation layerdirectly on the first conductive layer and the first isolation layer;removing a first portion of the second isolation layer to expose a firstportion of the first conductive feature; and forming a second metallayer directly on the second portion of the first conductive feature. 9.The method of claim 8, further comprising: forming a second interlayerdielectric layer on the first isolation layer; and forming a secondconductive feature extending through the second interlayer dielectriclayer, the first isolation layer and to the first metal layer.
 10. Themethod of claim 9, further comprising: forming an etch stop layer on thesecond interlayer dielectric layer; and forming a third interlayerdielectric layer on the etch stop layer, and wherein the forming of thesecond conductive feature extending through the second interlayerdielectric layer, the first isolation layer and to the first metal layerfurther includes forming the second conductive feature extending throughthird interlayer dielectric layer and the etch stop layer.
 11. Themethod of claim 10, further comprising forming a third conductivefeature extending through the third interlayer dielectric layer, theetch stop layer and to the second metal layer.
 12. The method of claim8, wherein the first isolation layer is formed of a different materialthan the second isolation layer.
 13. The method of claim 8, wherein thefirst isolation layer is formed of the same material as the secondisolation layer.
 14. The method of claim 8, wherein the forming of thefirst metal layer directly on at least one of the gate electrode layerand the gate dielectric layer includes forming the first metal layerdirectly on the gate electrode layer and the gate dielectric layer. 15.A method of forming a semiconductor device, comprising: forming a finover a substrate; forming a gate structure over a channel region of thefin, wherein the gate structure includes a gate stack and spacersdisposed along sidewalls of the gate stack, the gate stack including agate dielectric layer and a gate electrode; epitaxially growing asource/drain (S/D) feature over a source/drain region of the fin;forming a first interlayer dielectric (ILD) layer over the S/D featureand the substrate; recessing the gate structure including the spacersand the gate stack, such that a top surface of the spacers is lower thana top surface of the first ILD layer and a top surface of the gate stackis lower than the top surface of the spacers; and forming a first metallayer, by a bottom-up grow process, over the gate stack, wherein thefirst metal layer covers the top surface of the gate stack including thegate dielectric layer and the gate electrode.
 16. The method of claim15, wherein recessing the gate structure comprises: etching the spacersand the gate stack together, such that the top surface of the spacersand the gate stack is lower than the top surface of the first ILD layer;and further etching the gate stack, such that the top surface of thegate electrode is lower than the top surface of the spacers, and aT-shape trench is formed over the gate stack and the spacers.
 17. Themethod of claim 15, further comprising: etching the first ILD layer toform a S/D contact opening; forming a S/D contact in the S/D contactopening; depositing a second ILD layer over the first metal layer andthe spacers; and forming a gate via through the second ILD layer andcontacting the first metal layer, wherein the gate via includes a samematerial as the first metal layer and an area of a bottom surface of thegate via is smaller than an area of a bottom surface of the first metallayer.
 18. The method of claim 17, further comprising: forming a firstisolation feature after forming the first metal layer and beforedepositing the second ILD layer, wherein the first isolation feature isdeposited over a top surface of the first metal layer, extending alongsidewalls of the spacers, over the top surface of the spacers, andfurther along a sidewall of the S/D contact.
 19. The method of claim 15,further comprising: recessing a top portion of the S/D contact; andforming a second isolation feature over the recessed S/D contact,wherein the second isolation feature includes a first sidewallcontacting the first isolation feature and a second sidewall facing awayfrom the first isolation feature, the first sidewall is align with asidewall of the recessed S/D contact, the second sidewall forms a trenchtherein and a portion of a top surface of the recessed S/D contacts isexposed through the trench.
 20. The method of claim 19, furthercomprising: forming a second metal layer to cover the top surface of therecessed S/D contacts exposed in the trench; and forming a S/D via overthe second metal layer, wherein the S/D via includes a same material asthe second metal layer.